Part Number
|
HGT1S3N60A4DS |
Manufacturer
|
Fairchild Semiconductor |
Description
|
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Published
|
Mar 23, 2005 |
Datasheet
|
HGT1S3N60A4DS
|
Features
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use...
Similar Datasheet