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HGT1S3N60A4DS

Intersil Corporation
Part Number HGT1S3N60A4DS
Manufacturer Intersil Corporation
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Published Mar 23, 2005
Detailed Description HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 File Number 4818 600V, SMPS Series N-Channel IGBT with Anti-Parallel...
Datasheet PDF File HGT1S3N60A4DS PDF File

HGT1S3N60A4DS
HGT1S3N60A4DS

Overview
HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 File Number 4818 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49327.
The diode used in anti-parallel is the development type TA49369.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where lo...


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