HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Data Sheet December 2001
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar
transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49171.
The diode used in anti-parallel with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low condu...