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HGTG12N60B3D

Fairchild Semiconductor
Part Number HGTG12N60B3D
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Par...
Datasheet PDF File HGTG12N60B3D PDF File

HGTG12N60B3D
HGTG12N60B3D

Overview
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49171.
The diode used in anti-parallel with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developmental type TA49173.
Features • 27A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time.
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112ns at TJ = 150oC...


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