HGTG12N60D1D

HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features • 12A, 600V • Latch Free Operation • Typical Fall Time 500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR 60ns Description The IGBT is a MOS gated high voltage switching d...