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HGTG12N60D1D

Intersil Corporation
Part Number HGTG12N60D1D
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER ...
Datasheet PDF File HGTG12N60D1D PDF File

HGTG12N60D1D
HGTG12N60D1D

Overview
HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.
The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY PART NUMBER HGTG12N60D1D PACKAGE TO-220AB BRAND G12N60D1D Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G E NOTE: When ordering, use the entire part number Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG12N60D1D 600 600 21 12 48 ±20 30A at 0.
8 BVCES 21 12 75 0.
6 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC Collector-Emitter Voltage .
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BVCES Collector-Gate Voltage RGE = 1MΩ .
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BVCGR Collector Current Continuous at TC = +25oC .
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IC25 at TC = +90oC .
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IC90 Collector Current Pulsed (Note 1) .
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ICM Gate-Emitter Voltage Continuous.
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