HGTG30N120D2
April 1995
30A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
Features
• 30A, 1200V • Latch Free Operation • Typical Fall Time - 580ns • High Input Impedance • Low Conduction Loss
Description
The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar
transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low co...