DatasheetsPDF.com

HGTG30N120D2

Intersil Corporation
Part Number HGTG30N120D2
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG30N120D2 April 1995 30A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM S...
Datasheet PDF File HGTG30N120D2 PDF File

HGTG30N120D2
HGTG30N120D2

Overview
HGTG30N120D2 April 1995 30A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features • 30A, 1200V • Latch Free Operation • Typical Fall Time - 580ns • High Input Impedance • Low Conduction Loss Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low co...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)