Part Number
|
AP4506GEH |
Manufacturer
|
Advanced Power Electronics |
Description
|
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Feb 20, 2014 |
Detailed Description
|
AP4506GEH
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Good Thermal Performance...
|
Datasheet
|
AP4506GEH
|
Overview
AP4506GEH
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance
S1 G1 S2 G2 D1/D2
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID P-CH BVDSS
30V 24mΩ 9A -30V 36mΩ -8A
TO-252-4L
RDS(ON) ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D1 G1 G2
D2
S1
S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 30...
Similar Datasheet