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AP4506GEM

Advanced Power Electronics
Part Number AP4506GEM
Manufacturer Advanced Power Electronics
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Feb 20, 2014
Detailed Description AP4506GEM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast...
Datasheet PDF File AP4506GEM PDF File

AP4506GEM
AP4506GEM

Overview
AP4506GEM RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance S2 D2 D1 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) G2 30V 30mΩ 6.
4A -30V 40mΩ -6A ID P-CH BVDSS RDS(ON) ID SO-8 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness.
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 +20 6.
4 5.
1 30 2.
0 -55 to 150 -55 to 150 P-channel -30 +20 -6.
0 -4.
8 -30 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W Data and specifications subject to change without notice 1 200902103 Free Datasheet http://www.
Datasheet-PDF.
com/ AP4506GEM N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.
5V, ID=4A Min.
30 1 - Typ.
17 8.
3 1.
5 4 6 5.
6 17 3.
6 575 100 70 Max.
Units 30 36 3 1 25 +30 13 920 V mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=6A VDS=24V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.
0MHz Drain-Source Leak...


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