INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Darlington Power
Transistor
2SD1410
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage:V CE(sat)= 2.
0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V
APPLICATIONS ·Igniter applications ·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃
VALUE 300 250 5 6 1 2.
0
UNIT V V V A A
PC Collector Power Dissipation @ TC=25℃ TJ Tstg J...