NTGD3147F Power MOSFET and
Schottky Diode
Features
−20 V, −2.
5 A, P−Channel with
Schottky Barrier Diode, TSOP−6
• • • • • •
Fast Switching Low Gate Change Low RDS(on) Low VF
Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device
http://onsemi.
com P−CHANNEL MOSFET
V(BR)DSS −20 V RDS(on) Max 145 mW @ −4.
5 V 200 mW @ −2.
5 V ID Max −2.
2 A −1.
6 A
SCHOTTKY DIODE
VR Max 20 V VF Max 0.
45 V IF Max 1.
0 A
Applications
• DC−DC Converters • Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipa...