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NTGD3149C

ON Semiconductor
Part Number NTGD3149C
Manufacturer ON Semiconductor
Description Power MOSFET
Published Mar 7, 2014
Detailed Description NTGD3149C Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features Power MOSFET • • • • • • Complementary N−Channel and...
Datasheet PDF File NTGD3149C PDF File

NTGD3149C
NTGD3149C

Overview
NTGD3149C Complementary, 20 V, +3.
5/−2.
7 A, TSOP−6 Dual Features Power MOSFET • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.
com V(BR)DSS N−Ch 20 V P−Ch −20 V RDS(on) MAX 60 mW @ 4.
5 V 90 mW @ 2.
5 V 110 mW @ 4.
5 V 145 mW @ 2.
5 V ID MAX (Note 1) 3.
5 A Applications −2.
7 A • DC−DC Conversion Circuits • Load/Power Switching with Level Shift MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current (N−Ch & P−Ch) TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS TL ID Steady State t≤5s Steady State t≤5s Steady State t≤5s N−Ch P−Ch Symbol VDSS VGS ID Value 20 ±8 3.
2 2.
3 3.
5 2.
4 1.
7 2.
7 0.
9 1.
1 11 8.
0 −55 to 150 0.
8 260 °C A °C A W A Unit V V A D1 S2 G1 S1 N−CHANNEL MOSFET G2 D2 P−CHANNEL MOSFET MARKING DIAGRAM 1 TSOP−6 CASE 318G STYLE 13 CC MG G 1 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) CC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTION Symbol RqJA RqJA Value 140 110 Unit °C/W °C/W THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t ≤ 5 s (Note 1) G1 S2 G2 1 2 3 6 D1 5 S1 4 D2 Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
Sur...


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