2SC2508

2SC2500 : www.DataSheet.co.kr 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rat.

2SC2500 : TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,,。 High DC current gain and excellent hFE linearity,low saturation voltage. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 140～240 B 200～330 C 300～450 D 420～600 http://www.fsbrec.com 1/6 2SC2500 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Base Current Collector Power Dissipation Junction Temperature Storage Temperature .

2SC2500 : JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2500 TRANSISTOR (NPN) FEATURES z Strobe Flash Applications z Medium Power Amplifier Applications TO-92L 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value 30 10 6 2 900 150 -55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Unit V V V A mW ℃ ℃ Parameter Symbol Test conditions Collector-base breakdown volt.

2SC2501 : ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 PT Total Power Dissipation 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Therma.

2SC2502 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 6 ICM Collector Current-Peak 12 IB Base Curre.

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2SC2508 : HG HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2508 Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Powered by ICminer.com Electronic-Library Service CopyRight 2003 Sep. 1998 Free Datasheet http://www.datasheetlist.com/ .

2SC2509 : SILICON NPN EPITAXIAL PLANAR TYPE 2 - 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (LOW SUPPLY VOLTAGE USE) FEATURES . Specified 12.5V, 28MHz Characteristics : Output Power : P o =10WpeP : Minimum Gain : Gpe = 14dB : Efficiency : ? c =35%(Min. : Intermodulation Distortion : IMD=-30dB(Max. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO ic PC Tstg RATING 40 40 18 20 150 -55 ~150 UNIT Unit in mm ^6 10. 3 MAX jZ)3.6±ag ; 1.5 MAX I 2.54 2.54 OJ e i 123 "U 1. .