SSC8033GS3 P-Channel Enhancement Mode MOSFET z Features VDS -30V VGS ±20V z RDSon TYP 52mR@-10V 68mR@-4V5 ID -4.
2A Applications ¾ Load Switch ¾ DCDC conversion ¾ TFT panel power switch z Pin configuration Top View z General Description This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
z Package Information 1/4 SSC-3V1 http://www.
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