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SSC8033GS3

SPIRIT-SEMI
Part Number SSC8033GS3
Manufacturer SPIRIT-SEMI
Description P-Channel Enhancement Mode MOSFET
Published Mar 12, 2014
Detailed Description SSC8033GS3 P-Channel Enhancement Mode MOSFET z Features VDS -30V VGS ±20V z RDSon TYP 52mR@-10V 68mR@-4V5 ID -4.2A App...
Datasheet PDF File SSC8033GS3 PDF File

SSC8033GS3
SSC8033GS3

Overview
SSC8033GS3 P-Channel Enhancement Mode MOSFET z Features VDS -30V VGS ±20V z RDSon TYP 52mR@-10V 68mR@-4V5 ID -4.
2A Applications ¾ Load Switch ¾ DCDC conversion ¾ TFT panel power switch z Pin configuration Top View z General Description This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
z Package Information 1/4 SSC-3V1 http://www.
spirit-semi.
com Free Datasheet http://www.
nDatasheet.
com SSC8033GS3 z Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range PD TJ, TSTG TA=25°C ID -16 1 -55 to +1...


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