Silicon Carbide Power MOSFET
VDS 1200 V CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 17.7 A RDS(on) 160 mΩ N-Channel Enhancement Mode • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Benefits • • • Higher System E...
Cree