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CPM2-1200-0160B

Cree
Part Number CPM2-1200-0160B
Manufacturer Cree
Description Silicon Carbide Power MOSFET
Published Mar 12, 2014
Detailed Description VDS 1200 V CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 17.7 A R...
Datasheet PDF File CPM2-1200-0160B PDF File

CPM2-1200-0160B
CPM2-1200-0160B

Overview
VDS 1200 V CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 17.
7 A RDS(on) 160 mΩ N-Channel Enhancement Mode • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • Auxiliary Power Supplies Solar Inverters High Voltage DC/DC Converters PFC Boost Circuits Part Number CPM2-1200-0160B Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 17.
7 11 45 -10/+25 -55 to +150 260 325 Unit A Test Conditions VGS@20 V, TC = 25˚C VGS@20 V, TC = 100˚C Note Note 1 IDS (DC) IDS (pulse) Pulsed Drain Current VGS TJ , Tstg TL TPROC Gate Source Voltage Operating Junction and Storage Temperature Solder Temperature Maximum Processing Temperatur...


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