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Ordering number:ENN778F
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1207/2SC2909
High-Voltage Switching AF 60W Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast switching speed.
Package Dimensions
unit:mm 2003B
[2SA1207/2SC2909]
5.
0 4.
0 4.
0
0.
45 0.
5 0.
6 2.
0 0.
45 0.
44 14.
0 1 2 3
5.
0
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj ...