SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.
6 21.
8 Single D FEATURES • Low Figure-of-Merit Ron x Qg 0.
38 • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-247AC SiHG16N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating ...

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