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G16N50C

Vishay
Part Number G16N50C
Manufacturer Vishay
Description SIHG16N50C
Published Mar 21, 2014
Detailed Description SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Datasheet PDF File G16N50C PDF File

G16N50C
G16N50C

Overview
SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.
6 21.
8 Single D FEATURES • Low Figure-of-Merit Ron x Qg 0.
38 • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-247AC SiHG16N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s EAS PD TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 16 10 40 2 320 250 - 55 to + 150 300 °C W/°C mJ W A UNIT V Notes a.
Limited by maximum junction temperature.
b.
VDD = 50 V, starting TJ = 25 °C, L = 2.
5 mH, Rg = 25 Ω, IAS = 16 A.
c.
Repetitive rating; pulse width limited by maximum junction temperature.
d.
1.
6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91418 S10-1355-Rev.
A, 14-Jun-10 www.
vishay.
com 1 Free Datasheet http://www.
0PDF.
com SiHG16N50C Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP.
MAX.
40 0.
5 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductancea Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Input Resistance Drain-Sou...


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