Part Number
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SIHG16N50C |
Manufacturer
|
Vishay |
Description
|
Power MOSFET |
Published
|
Mar 21, 2014 |
Detailed Description
|
SiHG16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
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Datasheet
|
SIHG16N50C
|
Overview
SiHG16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.
6 21.
8 Single
D
FEATURES
• Low Figure-of-Merit Ron x Qg
0.
38
• 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC
TO-247AC
G S D G S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free TO-247AC SiHG16N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating ...
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