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SIHG16N50C

Vishay
Part Number SIHG16N50C
Manufacturer Vishay
Description Power MOSFET
Published Mar 21, 2014
Detailed Description SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Datasheet PDF File SIHG16N50C PDF File

SIHG16N50C
SIHG16N50C

Overview
SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.
6 21.
8 Single D FEATURES • Low Figure-of-Merit Ron x Qg 0.
38 • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-247AC SiHG16N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s EAS PD TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 16 10 40 2 320 250 - 55 to + 150 300 °C W/°C mJ W A UNIT V Notes a.
Limited by maximum junction temperature.
b.
VDD =...


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