PD - 95643A
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• • • • • • Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free.
C
IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF
VCES = 600V IC = 6.
8A, TC=100°C
G E
tsc 10µs, TJ=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ.
= 2.
1V
TO-220 IRGB4B60KPbF
D2Pak TO-262 IRGS4B60KPbF IRGSL4B60KPbF
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C...