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IRGS4B60KPBF

International Rectifier
Part Number IRGS4B60KPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 31, 2014
Detailed Description PD - 95643A INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs...
Datasheet PDF File IRGS4B60KPBF PDF File

IRGS4B60KPBF
IRGS4B60KPBF

Overview
PD - 95643A INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free.
C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.
8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel VCE(on) typ.
= 2.
1V TO-220 IRGB4B60KPbF D2Pak TO-262 IRGS4B60KPbF IRGSL4B60KPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.
Fig.
C.
T.
5) Clamped Inductive Load current Max.
600 12 6.
8 Units V A c 24 24 ±20 63 31 -55 to +175 °C 300 (0.
063 in.
(1.
6mm) from case) V W Gate-to-Emitter Voltage Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature, for 10 sec.
Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient Weight Junction-to-Ambient (PCB Mount, steady state) Min.
––– ––– ––– ––– ––– Typ.
––– 0.
50 ––– ––– 1.
44 Max.
2.
4 ––– 62 40 ––– Units °C/W d g www.
irf.
com 1 11/18/04 Free Datasheet http://www.
Datasheet4U.
com IRGB/S/SL4B60KPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage Min.
Typ.
Max.
Units 600 — — — — 3.
5 — — — — — — — 0.
28 2.
1 2.
5 2.
6 4.
5 -8.
1 1.
7 1.
0 54 300 — — — 2.
5 2.
8 2.
8 5.
5 — — 150 300 800 ±100 V V Conditions VGE = 0V, IC = 500µA Ref.
Fig.
V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 4.
0A, VGE = 15V, TJ = 25°C V IC = 4.
0A, VGE = 15V, TJ = 150°C ...


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