IRGP4063D1PbF IRGP4063D1-EPbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 48A Applica ons • Industrial Motor Drive • Inverters • UPS • Welding
G E C
G
G
n-channel
G Gate
C G IRGP4063D1PbF C Collector
E
C G
E
IRGP4063D1‐EPbF E Emitter
Features
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5µs short circuit SOA Lead-free, RoHS compliant Base part number IRGP4063D1PbF IRGP4063D1-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 10...