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IRGP4063D1-EPBF

Part Number	IRGP4063D1-EPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Mar 31, 2014
Detailed Description	IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC =...
Datasheet	IRGP4063D1-EPBF PDF File

Overview

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 48A Applica ons • Industrial Motor Drive • Inverters • UPS • Welding G E C G G n-channel G Gate C G IRGP4063D1PbF C Collector E C G E IRGP4063D1‐EPbF E Emitter Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5µs short circuit SOA Lead-free, RoHS compliant Base part number IRGP4063D1PbF IRGP4063D1-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw Package Type TO-247AC TO-247AD Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Orderable Part Number IRGP4063D1PbF IRGP4063D1-EPbF Standard Pack Form Quantity Tube 25 Tube 25 Max.
600 100 60 200 192 30 15 120 ±20 ±30 330 170 -40 to +175 Units V A V W °C 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Thermal Resistance Parameter Min.
Typ.
Max.
Units ––– ––– 0.
45 RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)  ––– ––– 2.
4 RJC (Diode) Thermal Resistance Junction-...

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IRGP4063D1-EPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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