Part Number
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ASDX005 |
Manufacturer
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Invensys |
Description
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0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT |
Published
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Apr 22, 2014 |
Detailed Description
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FCD9N60NTM N-Channel MOSFET
FCD9N60NTM
N-Channel MOSFET
600V, 9A, 0.385mΩ Features
• RDS(on) = 0.330Ω ( Typ.)@ VGS = 10...
|
Datasheet
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ASDX005
|
Overview
FCD9N60NTM N-Channel MOSFET
FCD9N60NTM
N-Channel MOSFET
600V, 9A, 0.
385mΩ Features
• RDS(on) = 0.
330Ω ( Typ.
)@ VGS = 10V, ID = 4.
5A • Ultra Low Gate Charge (Typ.
Qg = 17.
8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant
SupreMOSTM
February 2010
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.
By utilizing this advance technology and precise process control, SupreMOS provide world class Rsp, superior switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements fo...
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