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ASDX005

Part Number	ASDX005
Manufacturer	Invensys
Description	0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
Published	Apr 22, 2014
Detailed Description	FCD9N60NTM N-Channel MOSFET FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features • RDS(on) = 0.330Ω ( Typ.)@ VGS = 10...
Datasheet	ASDX005 PDF File

Overview

FCD9N60NTM N-Channel MOSFET FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.
385mΩ Features • RDS(on) = 0.
330Ω ( Typ.
)@ VGS = 10V, ID = 4.
5A • Ultra Low Gate Charge (Typ.
Qg = 17.
8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant SupreMOSTM February 2010 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.
By utilizing this advance technology and precise process control, SupreMOS provide world class Rsp, superior switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D G S D G D-PAK (TO-252) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Cur...

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