FDP52N20 / FDPF52N20T N-Channel MOSFET
October 2007
UniFETTM
FDP52N20 / FDPF52N20T
N-Channel MOSFET
200V, 52A, 0.
049Ω Features
• RDS(on) = 0.
041Ω ( Typ.
)@ VGS = 10V, ID = 26A • Low gate charge ( Typ.
49nC) • Low Crss ( Typ.
66pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited ...