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TMP86FH09AMG

Toshiba
Part Number TMP86FH09AMG
Manufacturer Toshiba
Description 8 Bit Microcontroller
Published Apr 22, 2014
Detailed Description FDP52N20 / FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 / FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω ...
Datasheet PDF File TMP86FH09AMG PDF File

TMP86FH09AMG
TMP86FH09AMG


Overview
FDP52N20 / FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 / FDPF52N20T N-Channel MOSFET 200V, 52A, 0.
049Ω Features • RDS(on) = 0.
041Ω ( Typ.
)@ VGS = 10V, ID = 26A • Low gate charge ( Typ.
49nC) • Low Crss ( Typ.
66pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D G G D S TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 357 2.
86 -55 to +150 300 52 33 208 2520 52 35.
7 4.
5 38.
5 0.
3 FDP52N20 FDPF52N20T 200 ±30 52* 33* 208* Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient FDP52N20 0.
35 0.
5 62.
5 FDPF52N20T 3.
3 62.
5 oC/W Units ©2007 Fairchild Semiconductor Corporation FDP52N20 / FDPF52N20T Rev.
A 1 www.
fairchildsemi.
com Free Datasheet http://www.
Datasheet4U.
com FDP52N20 / FD...


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