IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
55V @ IC = 12A Applications • Appliance Drive • Inverters • UPS
G E C
C
C
G
G
C G
E
E C G
IRGB4620DPbF TO-220AC
E C G
IRGP4620DPbF TO-247AC
E C G
IRGP4620D-EPbF TO-247AD
n-channel
G Gate
IRGS4620DPbF D2Pak
C Collector
E Emitter
Features
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C
Benefits
High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and high power capability
Pos...