isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC2954
DESCRIPTION ·Low Noise and High Gain
NF = 2.
3 dB TYP.
; ︱S21e︱2 = 20 dB TYP.
@ f = 200 MHz NF = 2.
4 dB TYP.
; ︱S21e︱2 = 12.
5 dB TYP.
@ f = 500 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for low noise wide band amplifier and buffer
amplifier of OSC, for VHF and CATV band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
35
V
VCEO Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
3.
0
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.
15
A
2
W
15...