NTMFS4H01N Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers Point of Load http://onsemi.
com VGS 4.
5 V 10 V MAX RDS(on) 0.
97 mW 0.
7 mW TYP QGTOT 39 nC 85 nC Applications • • • • • PIN CONNECTIONS SO8−FL (5 x 6 mm) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (No...

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