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NTMFS4H01NF

ON Semiconductor
Part Number NTMFS4H01NF
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jul 31, 2015
Detailed Description NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • Integrated Schottky Diode • Optimized Design...
Datasheet PDF File NTMFS4H01NF PDF File

NTMFS4H01NF
NTMFS4H01NF

Overview
NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • Integrated Schottky Diode • Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers & Point of Load MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) VDSS VGS ID 25 ±20 54 V V A Power Dissipation RqJA (TA = 25°C, Note 1) Continuous Drain Current RqJC (TC = 25°C, Note 1) PD 3.
2 W ID 334 A Power Dissipation RqJC (TC = 25°C, Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 57 Apk, L = 0.
3 mH) PD 125 W IDM 568 A EAS 487 mJ Drain to Source dV/...


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