Ordering number : EN3094B
2SA1708/2SC4488
Bipolar
Transistor
(-)100V, (-)1A, Low VCE(sat), (
PNP)
NPN Single NMP
Features
• • •
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Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed
( )2SA1708
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)1 (--)2 1 150 --55 to +150 Unit V V V A A W °C °C
Stresses exceeding Maximum Ratings may damage the device.
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