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Part Number
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HFS3N80 |
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Manufacturer
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SEMIHOW |
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Description
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800V N-Channel MOSFET |
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Published
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May 9, 2014 |
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Detailed Description
|
HFS3N80
Dec 2005
BVDSS = 800 V
HFS3N80
800V N-Channel MOSFET
FEATURES
Originative New Design Superi...
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Datasheet
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HFS3N80
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Overview
HFS3N80
Dec 2005
BVDSS = 800 V
HFS3N80
800V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ.
) ) Extended Safe Operating Area Lower RDS(ON) : 4.
0 Ω (Typ.
) @VGS=10V 100% Avalanche Tested
TC=25℃ unless otherwise specified
RDS(on) typ = 4.
0 Ω ID = 3.
0 A
TO-220F
11 2
3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy...
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