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HFS3N80

Part Number	HFS3N80
Manufacturer	SEMIHOW
Description	800V N-Channel MOSFET
Published	May 9, 2014
Detailed Description	HFS3N80 Dec 2005 BVDSS = 800 V HFS3N80 800V N-Channel MOSFET FEATURES Originative New Design Superi...
Datasheet	HFS3N80 PDF File

Overview

HFS3N80 Dec 2005 BVDSS = 800 V HFS3N80 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ.
) ) Extended Safe Operating Area Lower RDS(ON) : 4.
0 Ω (Typ.
) @VGS=10V 100% Avalanche Tested TC=25℃ unless otherwise specified RDS(on) typ = 4.
0 Ω ID = 3.
0 A TO-220F 11 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 800 3.
0* 1.
9* 12* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 320 30 3.
0 3.
9 4.
5 39 0.
31 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ.
--Max.
3.
2 62.
5 ℃/W Units ◎ SEMIHOW REV.
A0,Dec 2005 http://www.
Datasheet4U.
com HFS3N80 Electrical Characteristics TC=25 °C Symbol y Parameter unless otherwise specified Test Conditions Min Typ y Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 1.
5 A 2.
5 --4.
0 4.
5 4.
8 V Ω Off Characteristics BVDSS D i S Drain-Source B Breakdown kd V lt Voltage VGS = 0 V V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ------0.
99 ------1 10 100 -100 V V/℃ ㎂㎂㎁㎁ ΔBVDSS Breakdown Voltage Temperat...

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