Part Number
|
IXFN82N60Q3 |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
May 20, 2014 |
Detailed Description
|
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFN82N60Q3
Symbol VDSS VDGR VGSS...
|
Datasheet
|
IXFN82N60Q3
|
Overview
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFN82N60Q3
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg VISOL
Md
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C TC = 25C
50/60 Hz, RMS, t = 1minute
IISOL 1mA,
t = 1s
Mounting Torque for Base Plate Terminal Connection Torque
Maximum Ratings
600
V
600
V
30
V
40
V
66
A
240
A
82
A
4
J
50
960
-55 .
.
.
+150 150
-55 .
.
.
+150
2500 3000 1.
5/13 1.
3/11.
5
30
V/ns
W
C C C
V~ V~ Nm/lb.
in.
Nm/lb.
in.
g
Symbol
Test Conditions
...
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