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IXFN82N60Q3

Part Number IXFN82N60Q3
Manufacturer IXYS
Description Power MOSFET
Published May 20, 2014
Detailed Description Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN82N60Q3 Symbol VDSS VDGR VGSS...
Datasheet IXFN82N60Q3




Overview
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN82N60Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Maximum Ratings 600 V 600 V 30 V 40 V 66 A 240 A 82 A 4 J 50 960 -55 .
.
.
+150 150 -55 .
.
.
+150 2500 3000 1.
5/13 1.
3/11.
5 30 V/ns W C C C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g Symbol Test Conditions ...






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