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IXFN82N60Q3

IXYS
Part Number IXFN82N60Q3
Manufacturer IXYS
Description Power MOSFET
Published May 20, 2014
Detailed Description Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN82N60Q3 Symbol VDSS VDGR VGSS...
Datasheet PDF File IXFN82N60Q3 PDF File

IXFN82N60Q3
IXFN82N60Q3

Overview
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN82N60Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Maximum Ratings 600 V 600 V 30 V 40 V 66 A 240 A 82 A 4 J 50 960 -55 .
.
.
+150 150 -55 .
.
.
+150 2500 3000 1.
5/13 1.
3/11.
5 30 V/ns W C C C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 41A, Note 1 Characteristic Values Min.
Typ.
Max.
600 V 3.
5 6.
5 V 200 nA 50 A 3 mA 75 m VDSS = ID25 =  RDS(on) trr  600V 66A 75m 300ns miniBLOC E153432 S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.
Features  International Standard Package  Low Intrinsic Gate Resistance  miniBLOC with Aluminum Nitride Isolation  Low Package Inductance  Fast Intrinsic Rectifier  Low RDS(on) and QG Advantages  High Power Density  Easy to Mount  Space Savings Applications  DC-DC Converters  Battery Chargers  Switch-Mode and Resonant-Mode Power Supplies  DC Choppers  Temperature and Lighting Controls © 2020 IXYS CORPORATION, All Rights Reserved DS100340A(1/20) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 41A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input Resistance td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID = 41A RG = 1 (External) Qg(on) Qgs Qgd VGS = 1...


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