Part Number
|
FQPF47P06 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
May 21, 2014 |
Detailed Description
|
FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET
March 2013
-60 V, -30 A, 26 mΩ
Description
P-Channel QFET® MOSFET
FQPF47P...
|
Datasheet
|
FQPF47P06
|
Overview
FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET
March 2013
-60 V, -30 A, 26 mΩ
Description
P-Channel QFET® MOSFET
FQPF47P06 / FQPF47P06YDTU
Features
• -30 A, -60 V, RDS(on)=26 mΩ(Max.
) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ.
84 nC) • Low Crss (Typ.
320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplie...
Similar Datasheet