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FQPF47P06YDTU

Fairchild Semiconductor
Part Number FQPF47P06YDTU
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published May 21, 2014
Detailed Description FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET March 2013 -60 V, -30 A, 26 mΩ Description P-Channel QFET® MOSFET FQPF47P...
Datasheet PDF File FQPF47P06YDTU PDF File

FQPF47P06YDTU
FQPF47P06YDTU

Overview
FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET March 2013 -60 V, -30 A, 26 mΩ Description P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU Features • -30 A, -60 V, RDS(on)=26 mΩ(Max.
) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ.
84 nC) • Low Crss (Typ.
320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplie...


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