CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET Spec.
No.
: C400L3 Issued Date : 2009.
06.
22 Revised Date : Page No.
: 1/7 MTP452L3 Features • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS RDSON(MAX) ID -30V 55mΩ -6A Symbol MTP452L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-t...

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