DatasheetsPDF.com

MTP452M3

CYStech Electronics
Part Number MTP452M3
Manufacturer CYStech Electronics
Description 30V P-CHANNEL Enhancement Mode MOSFET
Published May 25, 2014
Detailed Description CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C426M3 Issued Date : 2012.02.07 Revised Dat...
Datasheet PDF File MTP452M3 PDF File

MTP452M3
MTP452M3

Overview
CYStech Electronics Corp.
30V P-CHANNEL Enhancement Mode MOSFET Spec.
No.
: C426M3 Issued Date : 2012.
02.
07 Revised Date : Page No.
: 1/8 MTP452M3 Features • Single Drive Requirement • Low On-resistance, RDS(ON)=50mΩ(typ.
)@VGS=-10V, ID=-3.
2A RDS(ON)=72mΩ(typ.
)@VGS=-4.
5V, ID=-2.
6A • Ultra High Speed Switching • Pb-free package Symbol MTP452M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note : *1.
Pulse width limited by maximum junction temperature VDS VGS ID ID IDM PD Tj, Tstg -30 ±20 -5.
3 -4.
2 -20 *1, 3 2 *2 1.
3 *2 -55~+150 V V A A A W °C *2.
Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min.
copper pad *3.
Pulse width≤300μs, duty cycle≤2% MTP452M3 CYStek Product Specification http://www.
Datasheet4U.
com CYStech Electronics Corp.
Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Note : Surface mounted on 1 in² copper pad of FR-4 board.
Spec.
No.
: C426M3 Issued Date : 2012.
02.
07 Revised Date : Page No.
: 2/8 Symbol Rth,ja Limit 62.
5 Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr Min.
-30 -1.
0 Typ.
-1.
6 5.
6 50 72 619 55 49 7 3 20 15 11 2.
3 4.
3 -0.
8 22 18 Max.
-2.
5 ±100 -1 -25 60 80 -1.
2 Unit V V S nA μA μA mΩ Test Conditions VGS=0, ID=-250μA VDS=VGS, ID=-250μA VDS=-5V, ID=-3A VGS=±20V, VDS=0 VDS=-30V, VGS=0 VDS=-24V, VGS=0 (Tj=70°C) ID=-3.
2A, VGS=-10V ID=-2.
6A, VGS=-4.
5V pF VDS=-25V, VGS=0, f=1MHz VDS=-15V, ID=-1A, VGS=-10V RG=3.
3Ω VDS=-15V, ID=-5.
3A, VGS=-10V, VGS=0V, IS=-1.
2A IS=-3.
2A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse W...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)