Part Number
|
DMS05N60 |
Manufacturer
|
Bruckewell Technology |
Description
|
N-Channel MOSFET |
Published
|
May 26, 2014 |
Detailed Description
|
DMS05N60 N-Channel Depletion-Mode MOSFET
FEATURES
• Depletion Mode (Normally On) • Advanced Planar Technology • Rugged P...
|
Datasheet
|
DMS05N60
|
Overview
DMS05N60 N-Channel Depletion-Mode MOSFET
FEATURES
• Depletion Mode (Normally On) • Advanced Planar Technology • Rugged Poly-silicon Gate Cell Structure • Fast Switching Speed • RoHS Compliant/Lead Free • ESD Sensitive BVDSX 600V RDS(ON) (Max.
) 700Ω IDSS,min 12mA
Applications
• Normally-on Switches • SMPS start-up Circuit • Linear Amplifier • Converters • Constant Current Source • Telecom
Absolute Maximum Ratings
Symbol VDSX VDGX ID IDM PD VGS TL TJ and TSTG Drain-to-Source Voltage Drain-to-Gate Voltage
[1]
TA=25 ℃ unless otherwise specified
Parameter
[1]
DMS05N60 600 600 0.
020 0.
081 0.
50 ±20 300 -55~150
Unit V V A W V
Continuous Drain Current Pulsed Drain Current Power Dissipation Gate...
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