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DMS05N60

Part Number	DMS05N60
Manufacturer	Bruckewell Technology
Description	N-Channel MOSFET
Published	May 26, 2014
Detailed Description	DMS05N60 N-Channel Depletion-Mode MOSFET FEATURES • Depletion Mode (Normally On) • Advanced Planar Technology • Rugged P...
Datasheet	DMS05N60 PDF File

Overview

DMS05N60 N-Channel Depletion-Mode MOSFET FEATURES • Depletion Mode (Normally On) • Advanced Planar Technology • Rugged Poly-silicon Gate Cell Structure • Fast Switching Speed • RoHS Compliant/Lead Free • ESD Sensitive BVDSX 600V RDS(ON) (Max.
) 700Ω IDSS,min 12mA Applications • Normally-on Switches • SMPS start-up Circuit • Linear Amplifier • Converters • Constant Current Source • Telecom Absolute Maximum Ratings Symbol VDSX VDGX ID IDM PD VGS TL TJ and TSTG Drain-to-Source Voltage Drain-to-Gate Voltage [1] TA=25 ℃ unless otherwise specified Parameter [1] DMS05N60 600 600 0.
020 0.
081 0.
50 ±20 300 -55~150 Unit V V A W V Continuous Drain Current Pulsed Drain Current Power Dissipation Gate-to-Source Voltage Soldering Temperature Distance of 1.
6mm from case for 10 seconds Operating and Storage Temperature Range ℃ Caution: Stresses greater than those listed in the “Absolute Maximum Ratings “may cause permanent damage to the device.
Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient DMS05N60 250 Unit K/W ©Bruckewell Technology Corporation Rev.
A -2012 http://www.
Datasheet4U.
com DMS05N60 N-Channel Depletion-Mode MOSFET Electrical Characteristics OFF Characteristics Symbol BVDSX ID(OFF) Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Teakage Current TA=25℃ unless otherwise specified Min.
600 ----Typ.
-----Max.
-0.
1 10 100 -100 Unit V μA μA nA Test Conditions VGS=-5V,ID=250μA VDS=600V,VGS=-5V VDS=600V,VGS=-5V TJ=125℃ VGS=+20V,VDS=0V VGS=-20V,VDS=0V IGSS Gate-to-Source Leakage Current ON Characteristics Symbol IDSS RDS(ON) VGS(OFF) gfs Parameter Saturated Drain-to-Source Current Static Drain-to-Source On-Resistance Gate-to-Source Cut-off Voltage Forward Transconductance TA=25℃ unless otherwise specified Min.
12 --2.
7 -Typ.
-500 -15.
4 Max.
-700 -1.
5 -Unit mA Ω V mS Test Conditions VGS=0V,VDS=25V VGS=0V,ID=3Ma [4] VDS=3V,ID=8μA VDS=10V,ID=5mA Dynamic Characteristics Symbol CISS COSS CRSS QG QGS QGD Parameter Input C...

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DMS05N60 N-Channel MOSFET - Bruckewell Technology

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