Part Number
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MSF8N80-G |
Manufacturer
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Bruckewell Technology |
Description
|
800V N-Channel MOSFET |
Published
|
May 26, 2014 |
Detailed Description
|
MSF8N80-G 800V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using the advanced planar stripe, DMOS...
|
Datasheet
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MSF8N80-G
|
Overview
MSF8N80-G 800V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using the advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
FEATURES
• RDS(on) (typ 1.
3 Ω )@VGS=10V • Gate Charge (Typical 39nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • Halogen Free
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,...
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