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MSF8N80-G

Part Number	MSF8N80-G
Manufacturer	Bruckewell Technology
Description	800V N-Channel MOSFET
Published	May 26, 2014
Detailed Description	MSF8N80-G 800V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using the advanced planar stripe, DMOS...
Datasheet	MSF8N80-G PDF File

Overview

MSF8N80-G 800V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using the advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
FEATURES • RDS(on) (typ 1.
3 Ω )@VGS=10V • Gate Charge (Typical 39nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,...

Similar Datasheet

MSF8N80-G 800V N-Channel MOSFET - Bruckewell Technology

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