IPB108N15N3 G
IPP111N15N3 G IPI111N15N3 G
OptiMOS 3 Power-
Transistor
TM
Product Summary V DS R DS(on),max (TO263) ID 150 10.
8 83 V mΩ A
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification •Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
Package Marking
PG-TO263-3 108N15N
PG-TO220-3 111N15N
PG-TO262-3 111N15N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter ...