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IPI111N15N3

INCHANGE
Part Number IPI111N15N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 29, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast S...
Datasheet PDF File IPI111N15N3 PDF File

IPI111N15N3
IPI111N15N3

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.
1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 83 A IDM Drain Current-Single Pulsed 332 A PD Total Dissipation @TC=25℃ 214 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL P...


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